国际超硬材料新技术网
国际超硬材料新技术网


New Techniques Of Superhard Materials
New Techniques Of Superhard Materials
 
 
我们只做国际领先技术服务         咨询热线：13141225688
我们只做国际领先技术服务         咨询热线：13141225688


2025版《国际光刻胶制造工艺配方精选汇编》

2025版《国际光刻胶制造工艺配方精选汇编》

极紫外光刻胶（EUV光刻胶）技术：EUV光刻胶是目前最先进的光刻胶技术之一，主要用于极紫外光刻工艺，能够实现极小的线宽和高分辨率的图形转移，是制造高端芯片的关键材料例如，JSR公司在2011年就与SEMATECH联合开发出用于15nm工艺的化学放大型EUV光刻胶东京应化（TOK）也在EUV光刻胶领域处于领先地位，其在2020年拥有EUV光刻胶51.8%的市占率。

高灵敏度和高分辨率光刻胶技术：通过优化光刻胶的化学配方和结构，提高光刻胶对光的灵敏度和分辨率，从而实现更小的图形尺寸和更高的集成度如Inpria生产的包含氧化锡的EUV光刻胶，具有良好的灵敏度，将EUV的吸收效率提升了4倍，并且可以实现更简单的制造流程和更大的工艺窗口。

多层膜光刻技术：为了进一步提高光刻分辨率，采用多层膜光刻技术，通过在光刻胶层之间增加特殊的膜层，减少光的反射和散射，提高光刻的对比度和分辨率。

　　本资料是收录涉及《国际光刻胶制造工艺配方精选汇编》最新专利技术资料，资料中包括制造原料、配方、生产工艺、产品性能测试及标准、实际应用效果，技术指标，解决的具体问题等等，是企业提高产品质量和发展新产品的重要、实用、超值和难得的技术资料。


【资料内容】制造工艺及配方
【资料语种】英文
【项目数量】56项
【电子版】1680元（PDF文档  邮件发送）

￥ 0.00
1680.00
数量：
立即购买
加入购物车
  

极紫外光刻胶（EUV光刻胶）技术：EUV光刻胶是目前最先进的光刻胶技术之一，主要用于极紫外光刻工艺，能够实现极小的线宽和高分辨率的图形转移，是制造高端芯片的关键材料例如，JSR公司在2011年就与SEMATECH联合开发出用于15nm工艺的化学放大型EUV光刻胶东京应化（TOK）也在EUV光刻胶领域处于领先地位，其在2020年拥有EUV光刻胶51.8%的市占率。

高灵敏度和高分辨率光刻胶技术：通过优化光刻胶的化学配方和结构，提高光刻胶对光的灵敏度和分辨率，从而实现更小的图形尺寸和更高的集成度如Inpria生产的包含氧化锡的EUV光刻胶，具有良好的灵敏度，将EUV的吸收效率提升了4倍，并且可以实现更简单的制造流程和更大的工艺窗口。

多层膜光刻技术：为了进一步提高光刻分辨率，采用多层膜光刻技术，通过在光刻胶层之间增加特殊的膜层，减少光的反射和散射，提高光刻的对比度和分辨率。

　　本资料是收录涉及《国际光刻胶制造工艺配方精选汇编》最新专利技术资料，资料中包括制造原料、配方、生产工艺、产品性能测试及标准、实际应用效果，技术指标，解决的具体问题等等，是企业提高产品质量和发展新产品的重要、实用、超值和难得的技术资料。


【资料内容】制造工艺及配方
【资料语种】英文
【项目数量】56项
【电子版】1680元（PDF文档  邮件发送）

目录

序号项目名称研制单位
1Enhanced Euv Materials, Photoresists And Methods Of Their UseROBINSON ALEX P G [GB]
JACKSON ED [US]
O'CALLAGHAN GREGORY [GB]
ROTH JOHN [US]
MCCLELLAND ALEXANDRA [GB]
LADA TOM [US]
POPESCU CARMEN [GB]
2Euv Lithography Using Polymer Crystal-Based ReticlesREKHI SANDEEP
WALLING THOMAS JOHN FARRELL
PICHUMANI PRADEEP SAILAM
3Photoresist Composition For Euv, Method For Manufacturing Same, And Method For Forming Photoresist Pattern Using SameHONG SUKWON [KR]
HWANG CHAN CUK [KR]
KIM DO WON [KR]
BYEON JIN HWAN [KR]
AHN JAE BOONG [KR]
4Pellicle For Euv Lithography And Method For Manufacturing Pillicle Film Of The SamePARK CHUL KYUN
HONG JU HEE
CHOI MUN SU
KIM DONG HOI
5Pellicle For Euv LithographyHONG JU-HEE [KR]
PARK CHUL-KYUN [KR]
CHOI MUN-SU [KR]
KIM DONG-HOI [KR]
6Method To Reduce Line Edge Roughness For Euv Photoresist PatternWANG XIN-KE [CN]
SHEN ZE-QING [CN]
SINGHA ROY SUSMIT [IN]
MALLICK ABHIJIT BASU [US]
BHUYAN BHASKAR JYOTI [IN]
TANG JIECONG [SG]
SUDIJONO JOHN [US]
SALY MARK [US]
7Enhanced Euv Photoresists And Methods Of Their UseROBINSON ALEX P G [GB]
JACKSON EDWARD [US]
ROTH JOHN [US]
LADA TOM [US]
O'CALLAGHAN GREG [GB]
8Organometallic Tin Clusters As Euv PhotoresistLU FENG [US]
9Euv Low Roughness Euv LithographyWISE RICHARD
SHAMMA NADER
10Enhanced Euv Photoresist And Methods Of Use ThereofROBINSON ALEX P G
JACKSON EDWARD
ROTH JOHN
LADA TOM
O 'CALLAGHAN GREG
11Pellicle For Euv LithographyHONG JU HEE
JUNG MIN WOOK
CHOI MUN SU
12Method Of Euv LithographyCHEN TAI-YU [TW]
KHIVSARA SAGAR DEEPAK [IN]
CHIEN SHANG-CHIEH [TW]
LAM KAI TAK [SG]
YU SHENG-KANG [TW]
13Euv Composition For Semiconductor Euv Lithography And Method For Semiconductor Euv Lithography Using The SameLEE GEUN SU [KR]
LEE YEONG SEON
SEONG YEON HEE
KIM SEOK HYUN
KIM YOUNG CHAN
CHEON JONG HYEON
LEE SEUNG HYUK
14Pellicle For Euv Lithography Masks And Methods Of Manufacturing ThereofHSU PEI-CHENG [TW]
SUN TING-PI [TW]
LEE HSIN-CHANG [TW]
15Euv Metal Photoresist As Well As Preparation Method And Application ThereofWANG SU
FANG SHUNONG
16Euv Photoresist As Well As Preparation Method And Application ThereofWANG SU
FANG SHUNONG
17Euv/Eb Photoresist As Well As Preparation Method And Application ThereofFANG SHUNONG
WANG SU
TANG CHEN
18Euv Photomask And Manufacturing Method Of The SameHSU FENG YUAN [TW]
SHEN TRAN-HUI [TW]
HSU CHING-HSIANG [TW]
19Euv Euv Dose Reducing Layers Related Structures And Methods And Systems For Their ManufactureFATEMEH DAVODI
PAUL CHATELAIN
CHARLES DEZELAH
20Method Of Forming Carbon-Based Spacers For Euv Photoresist PatternsWANG XINKE
SHEN ZEQING
ROY SUMEET SINGH
MALLIK ABHIJIT BASU
BHUYAN BHASKAR JYOTI
TANG JIECONG
SUDIJONO JOHN
SALY MARK
21Zirconium-Coated Ultra-Thin, Ultra-Low Density Films For Euv LithographyLIMA MARCIO D [US]
GRAHAM MARY VIOLA [US]
UEDA TAKAHIRO [US]
22Euv Membrane For Euv Lithography And Manufacturing Method For The SameYU LAN
SEO KYOUNG WON
PARK JIN SU
YANG SEONG JU
HONG SEONG GYU
LEE HWA CHOL
KIM CHEONG
KIM KYOUNG SOO
YUN WOO HYUN
CHO SANG JIN
LEE DONG HOON
LEE SO YOON
PARK SEONG HWAN
KIM YONG SU
KANG HONG GU
CHOI JAE HYUCK
23Euv Euv An Euv Pellicle Frame And An Euv Pellicle Using ItHORIKOSHI JUN [JP]
24Pellicle For Euv LithographyHONG JU HEE
PARK CHUL KYUN
CHOI MUN SU
KIM DONG HOI
25Euv The Manufacturing Method Of Pellicle For Euv Photomask Using Reinforeced Graphene MembraneKIM YONG KI [KR]
26Euv The Manufacturing Method Of Pellicle For Protecting Euv Photomask Using Reinforeced PadKIM YONG KI [KR]
27Euv The Manufacturing Method Of Pellicle For Euv Photomask Using Reinforeced Graphene MembraneKIM YONG KI [KR]
28Implant Into Euv Metal Oxide Photoresist Module To Reduce Euv DosePRASAD RAJESH [US]
LIN YUNG-CHEN [US]
HUANG ZHIYU [US]
WANG FENGLIN [US]
LANG CHI-I [US]
HWANG HOYUNG DAVID [US]
AREVALO EDWIN A [US]
SHIM KYUHA [US]
29Method Of Manufacturing Euv Photo MasksLEE HSIN-CHANG [TW]
HSU PEI-CHENG [TW]
LIEN TA-CHENG [TW]
WANG TZU YI [TW]
30Blankmask And Photomask For Euv Lithography With Backside Conductive LayerWOO MI KYUNG
PARK MIN KYU
YANG CHUL KYU
31Euv Euvextreme Ultraviolet Mask And Method For Manufacturing The SameJANG SUNG WOO
LEE SUN PYO
JUNG EUI HAN
32Euv The Manufacturing Method Of Graphene Membrane Pellicle For Extreme Ultra Violet LithographyKIM YONG KI [KR]
33Enhanced Euv Photoresist Including A Core Tris(4-Hydroxyphenyl)Methane Group And Having Improved Sensitivity (Photosensitivity), Resolution (Line Width Roughness), Or BothROBINSON ALEX P G [GB]
MCCLELLAND ALEXANDRA [GB]
O '' CALLAGHAN GREG [GB]
JACKSON ED [US]
NGUYEN VAN HUY [GB]
MELONI FERNANDA [IT]
34Phase Shift Blank Mask And Photomask For Euv LithographyKIM YONG-DAE
LEE JONG-HWA
YANG CHUL KYU
35Methods For Making Euv Patternable Hard MasksWU CHENGHAO
TIMOTHY WILLIAM WEIDMAN
KATIE NARDI
36Pellicle For An Euv Lithography Mask And A Method Of Manufacturing ThereofCHAO TZU-ANG [TW]
CHENG CHAO-CHING [TW]
WANG HAN [TW]
37Pellicle For Euv LithographyHONG JU HEE
PARK CHUL KYUN
CHOI MUN SU
KIM DONG HOI
38Reflective Mask Blank For Euv Lithography, Mask Blank For Euv Lithography, And Manufacturing Methods ThereofAKAGI DAIJIRO [JP]
KAWAHARA HIROTOMO [JP]
UNO TOSHIYUKI [JP]
ISHIKAWA ICHIRO [JP]
SAKAKI KENICHI [JP]
39Thin Film For Euv Lithography Mask And Method Of Manufacturing SameXU BEICHENG
LI WEIHAO
LI HUANLING
LI XINCHANG
LIN JINXIANG
40Euv Light Generation System And Production Method Of Electronic DeviceNISHIMURA YUICHI
UENO YOSHIFUMI
41Thin Film For Euv Lithography Mask And Method Of Manufacturing SameSON JUNG-PIL
XU BEICHENG
LI XINCHANG
42Euv Euv Euv Euv-Level Substrate Euv Mask Base Euv Mask And Method Of Manufacturing SameJI MINGHUA
DONG YUHU
HUANG ZAOHONG
43Euv Photomask And Manufacturing Method ThereofXUE WENZHANG
LIAN DACHENG
LI XINCHANG
44Pellicle For Euv Lithography With Cnt Film And Method For Forming Film Of The SameCHOI MUN SU
HONG JU HEE
PARK CHUL KYUN
KIM DONG HOI
45Detection Method Of Euv Pellicle StatusLIU YEN-HAO [TW]
WANG SHAO-HUA [TW]
ZHANG ZHENG-HAO [TW]
LIN FAN-CHI [TW]
KUO CHUEH-CHI [TW]
CHEN LI-JUI [TW]
LIU HENG-HSIN [TW]
46Euv The Forming Method Of Graphene For Pellicle Membrane Of Extreme Ultra Violet LithographyKIM YONG KI [KR]
47Euv The Forming Method Of Graphene Membrane To Have Capping Layer For Pellicle Of Extreme Ultra Violet LithographyKIM YONG KI [KR]
48Euv Euv Reflection-Type Mask Blank For Euv Lithography Reflection-Type Mask For Euv Lithography And Manufacturing Methods ThereforAKAGI DAIJIRO [JP]
KAWAHARA HIROTOMO [JP]
SASAKI KENICHI [JP]
ISHIKAWA ICHIRO [JP]
UNO TOSHIYUKI [JP]
49Extreme Ultraviolet Lithography Method And Euv PhotomaskLEE CHIEN-MIN [TW]
CHEN YEN-LIANG [TW]
LIN SHY-JAY [TW]
CHEN LEE-FENG [TW]
TAI KUO LUN [TW]
50Phase Shift Blankmask And Photomask For Euv LithographyPARK MIN-KWANG [KR]
PARK MIN-KYU [KR]
WOO MI-KYUNG [KR]
YANG CHUL-KYU [KR]
KIM YONG-DAE [KR]
51Blankmask For Euv Lithography With Absorbing Film, And Photomask Fabricated With The SamePARK MIN-KYU [KR]
WOO MI-KYUNG [KR]
PARK MIN-KWANG [KR]
YANG CHUL-KYU [KR]
52Membrane For Euv LithographyHOUWELING ZOMER SILVESTER [NL]
GHIASI KABIRI MAHNAZ [NL]
GIESBERS ADRIANUS JOHANNES MARIA [NL]
BERGERS LAMBERTUS IDRIS JOHANNES CATHARINA [NL]
53Preferential Infiltration In Lithographic Process Flow For Euv Car ResistALVA GABRIELA [US]
HAN ZHEN-XING [CN]
SACHAN MADHUR [IN]
LANG CHI-I [US]
ZHOU LIN [CN]
LIU LEQUN [US]
KAZEM NASRIN [US]
54Enhanced Ultra-Thin, Ultra-Low Density Films For Euv Lithography And Method Of Producing ThereofLIMA MARCIO D [US]
UEDA TAKAHIRO [US]
55Pellicle For An Euv Lithography Mask And A Method Of Manufacturing ThereofLIN YUN-YUE [TW]
56Methods And Related Systems For Depositing Euv Sensitive FilmsPATEL KISHAN ASHOKBHAI [IN]
TOMCZAK YOANN [FR]
DEZELAH CHARLES [US]
ZYULKOV IVAN [RU]
DE ROEST DAVID KURT [BE]
GIVENS MICHAEL [US]
PIUMI DANIELE [IT]


天龍製鋸株式会社简称“Tenryu”，是由拥有近100年历史的日本机械锯片业界鼻祖—日本天龙制锯株式会社。


新素材・高度な切削条件にお応えする製品開発、それが私たちの仕事です。私たちは、１９１３年の設立以来、常に業界のパイオニアとして、「切削と加工」をテーマに、歩み続けてまいりました。長年に亘るテクノロジーの蓄積をベースに、独自に開発した最新の製造機械設備のもと、新たな被削材と高度化するユーザーニーズにお応えする製品を開発しています。天龍製鋸株式会社１００年の歴史、それは限りない切削課題への挑戦の歴史です。



天龍製鋸株式会社主要产品

鉄鋼用

–金属片锯
非鉄金属用
– 非鉄金属用（刃形CBB.D）
– LAQ（刃形D）
木質系材料用
– LAQIV
– LAQIII
– NEW LAQ
– LAQ（刃形A）
– LAQ（刃形B.C.D）
– 木質系用（刃形A）
– 木質系用（刃形B）
– 木質系用（刃形C）
その他
– 樹脂用、その他
– 超硬カッター
– 超硬ルーター
金刚石工具
钻石刀具
金刚石切片机
金刚石车床
ダイヤモンドソー
HSS工具
金属锯
金属印花
金刚石基板
帯　鋸
丸ナイフ
丸鋸、マイタソー
刃物製品
超硬工具
鉄鋼用
重・軽切削 スローアウェイタイプ
重・軽切削 スローアウェイタイプ
重切削用
重切削用
軽切削用
軽切削用
軽切削用　オートモビル用
軽切削用　オートモビル用












































用